MJE210

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Maximum DC Collector Current : 5 A
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk
Emitter- Base Voltage VEBO : 8 V
Package / Case : TO-225
Maximum Operating Frequency : 65 MHz (Min)


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Sustaining Voltage	VCEO	25	Vdc
CollectorBase Breakdown Voltage	VCB	40	Vdc
Emitter-Base Voltage	VEB	8.0	Vdc
Collector Current - Continuous - Peak	IC	5.0 10	Adc
Base Current - Continuous - Peak	IB	10	Adc
Total Device Dissipation @ TA = 250C Derated above 25°C	PD	15 0.12	Watts W/ac
Total Device Dissipation @ TC = 250C Derated above 25°C	PD	1.5 0.012	Watts W/
Operating and Storage Temperature	Tj,Tstg	-65 to +150

Parameters:

Technical/Catalog Information	MJE210
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	5A
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	45 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic	750mV @ 200mA, 2A
Frequency - Transition	65MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE210 MJE210 497 2589 5 ND 49725895ND 497-2589-5