MJE18604D2 Selling Leads, Price trend, MJE18604D2 DataSheet download, circuit diagram from SeekIC.com

Features: • Low Base Drive Requirement• High DC Current Gain (30 Typical) @ IC = 400 mA• Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread• Integrated CollectorEmitter Free Wheeling Diode Mat...

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SeekIC No. : 004421567 Detail

MJE18604D2: Features: • Low Base Drive Requirement• High DC Current Gain (30 Typical) @ IC = 400 mA• Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2...

MJE18604D2 Data Sheet

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Part Number:: MJE18604D2
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/26

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Product Details

Description

Features:

• Low Base Drive Requirement
• High DC Current Gain (30 Typical) @ I_C = 400 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active Antisaturation (H2BIP) Structure which Minimizes the Spread
• Integrated CollectorEmitter Free Wheeling Diode Matched with the Power Transistor
• Fully Characterized and Guaranteed Dynamic V_CE(sat)
• "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads

Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Breakdown Voltage	V_CBO	800	Vdc
Collector-Emitter Voltage@ R = 200	V_CEO	800	Vdc
CollectorBase Breakdown Voltage	V_CBO	1600	Vdc
CollectorEmitter Breakdown Voltage	V_CES	1600	Vdc
Emitter-Base Voltage	V_EBO	12	Vdc
Collector Current - Continuous - Peak (1)	I_C I_I	3 8	Adc
Base Current - Continuous Base Current - Peak (1)	I_B I_BM	2 4	Adc
Total Device Dissipation @ T_C = 25 Derate above 25°C	P_D	100 0.8	/W
Operating and Storage Temperature	T_j,T_stg	-65 to +150

Description

The MJE18604D2 is stateofart High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no more a need to guarantee an hfe window.

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MJE18604D2

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