MJE181

Transistors Bipolar (BJT) 3A 60V 12.5W NPN

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MJE181 Picture
SeekIC No. : 00210916 Detail

MJE181: Transistors Bipolar (BJT) 3A 60V 12.5W NPN

floor Price/Ceiling Price

Part Number:
MJE181
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 50 Configuration : Single
Maximum Operating Frequency : 50 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-225
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 50 MHz (Min)
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50
Package / Case : TO-225


Specifications

SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VCBO
Collector-Base Voltage : MJE180
: MJE181
: MJE182
-
60
80
100
V
V
V
VEBO
Emitter to Base voltage
-
7
V
VCEO
Collector-Emitter Voltage : MJE180
: MJE181
: MJE182
-
40
60
80
V
V
V
IC
Collector Current (DC)
-
3
A
ICP
Collector Current (Pulse)
-
6
A

IB

Base Current
1
A
PC
Collector dissipation(Ta=25)
-
1.5
W
PC
Collector dissipation(Tc=25
-65
12.5
W

TJ

-
150
Tamb
operating ambient temperature
-65
- 65 ~ 150






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