MJE18008

Transistors Bipolar (BJT) 8A 450V 125W NPN

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SeekIC No. : 00214574 Detail

MJE18008: Transistors Bipolar (BJT) 8A 450V 125W NPN

floor Price/Ceiling Price

Part Number:
MJE18008
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 14 Configuration : Single
Maximum Operating Frequency : 13 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 450 V
DC Collector/Base Gain hfe Min : 14
Maximum Operating Frequency : 13 MHz


Features:

·With TO-220C package
·High voltage ,high speed



Application

·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts




Specifications

SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage Open emitter
1000
V
VCEO
Collector-emitter voltage Open base
450
V
VEBO
Emitter-base voltage Open collector
9
V
IC
Collector current(DC)
10
A
ICM
Collector current-Peak
16
A
IB
Base current
4
A
IBM
Base current-Peak
8
A
PC
Collector power dissipation TC=25
125
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150





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