MJE18006G Selling Leads, Price trend , ON Semiconductor, MJE18006G DataSheet download, circuit diagram from SeekIC.com

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MJE18006G: Transistors Bipolar (BJT) BIP NPN 8A 450V

MJE18006G Data Sheet

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Part Number:: MJE18006G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	450 V
Emitter- Base Voltage VEBO :	9 V	Maximum DC Collector Current :	6 A
DC Collector/Base Gain hfe Min :	14	Configuration :	Single
Maximum Operating Frequency :	14 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220AB
Packaging :	Rail

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Maximum DC Collector Current : 6 A
Packaging : Rail
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 450 V
Maximum Operating Frequency : 14 MHz
DC Collector/Base Gain hfe Min : 14

Parameters:

Technical/Catalog Information	MJE18006G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	450V
Current - Collector (Ic) (Max)	6A
Power - Max	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic	600mV @ 130mA, 1.3A
Frequency - Transition	14MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE18006G MJE18006G

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MJE18006G

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