Transistors Bipolar (BJT) 5A 1000V 75W NPN
MJE18004D2G: Transistors Bipolar (BJT) 5A 1000V 75W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V |
Emitter- Base Voltage VEBO : | 12 V | Maximum DC Collector Current : | 5 A |
DC Collector/Base Gain hfe Min : | 15 | Configuration : | Single |
Maximum Operating Frequency : | 13 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Technical/Catalog Information | MJE18004D2G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 450V |
Current - Collector (Ic) (Max) | 5A |
Power - Max | 75W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 800mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
Frequency - Transition | 13MHz |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJE18004D2G MJE18004D2G |