MJE18002D2 Selling Leads, Price trend, MJE18002D2 DataSheet download, circuit diagram from SeekIC.com

Features: • Improved Global Efficiency Due to the Low Base Drive Requirements• DC Current Gain Typically Centered at 45• Extremely Low Storage Time Variation, Thanks to the Antisaturation Network• Easy to Use Thanks to the Integrated Collector/Emitter DiodeApplicationThe MJ...

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MJE18002D2: Features: • Improved Global Efficiency Due to the Low Base Drive Requirements• DC Current Gain Typically Centered at 45• Extremely Low Storage Time Variation, Thanks to the Antisat...

MJE18002D2 Data Sheet

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Part Number:: MJE18002D2
Supply Ability:: 5000

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1~5000

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Upload time: 2024/10/31

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Product Details

Description

Features:

• Improved Global Efficiency Due to the Low Base Drive Requirements
• DC Current Gain Typically Centered at 45
• Extremely Low Storage Time Variation, Thanks to the Antisaturation Network
• Easy to Use Thanks to the Integrated Collector/Emitter Diode

Application

The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.

Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Sustaining Voltage	V_CEO	450	Vdc
CollectorBase Breakdown Voltage	V_CBO	1000	Vdc
CollectorEmitter Breakdown Voltage	V_CES	1000	Vdc
Emitter-Base Voltage	V_EBO	12	Vdc
Collector Current - Continuous - Peak (1)	I_C I_CM	2 5	Adc
Base Current - Continuous - Peak (1)	I_B I_BM	1 2	Adc
Total Device Dissipation @ T_C = 25⁰C Derated above 25°C	P_D	50 0.4	Watts W/
Operating and Storage Temperature	T_j,T_stg	-65 to +150

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MJE18002D2

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