Position: Home  > All Categories> Integrated Circuits (ICs) > MJE172

MJE172

Transistors Bipolar (BJT) PNP Gen Pur Power Sw

product image

MJE172 Picture
See larger image
SeekIC No. : 00206849 Detail

MJE172: Transistors Bipolar (BJT) PNP Gen Pur Power Sw

MJE172 Data Sheet

floor Price/Ceiling Price

US $ .2~.25 / Piece | Get Latest Price
Part Number:
MJE172
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.25
  • $.24
  • $.22
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 50 Configuration : Single
Maximum Operating Frequency : 50 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-32
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Packaging : Tube
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 50 MHz (Min)
DC Collector/Base Gain hfe Min : 50
Package / Case : SOT-32


Application

·For low power audio amplifier and low current, high speed switching applications




Specifications

SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
 Collector-base voltage MJE170 Open emitter
-60
V
MJE171
-80
MJE172
-100
VCEO
 Collector-emitter voltage MJE170 Open base
-40
V
MJE171
-60
MJE172
-80
VEBO
 Emitter-base voltage Open collector
-7
V
IC
 Collector current
-3
A
ICM
 Collector current-peak
10
A
IB
 Base current
-1
A
PC
 Collector power dissipation TC=25
1.5
W
Ta=25
12.5
Tj
 Junction temperature
150
Tstg
 Storage temperature
-65~150





Description

THe MJE172 features are as follows:
· With TO-126 package
·Complement to type MJE180/181/182




Parameters:

Technical/Catalog InformationMJE172
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)3A
Power - Max12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
Frequency - Transition50MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseSOT-32-3, TO-126-3
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE172
MJE172
497 2553 5 ND
49725535ND
497-2553-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
View more