MJE170G

Transistors Bipolar (BJT) 3A 40V 12.5W PNP

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MJE170G: Transistors Bipolar (BJT) 3A 40V 12.5W PNP

floor Price/Ceiling Price

US $ .15~.26 / Piece | Get Latest Price
Part Number:
MJE170G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.26
  • $.24
  • $.18
  • $.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 50 Configuration : Single
Maximum Operating Frequency : 50 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-225
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 50 MHz (Min)
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50
Package / Case : TO-225


Parameters:

Technical/Catalog InformationMJE170G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)3A
Power - Max12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
Frequency - Transition50MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE170G
MJE170G
MJE170GOS ND
MJE170GOSND
MJE170GOS



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