MJE15035G, US $ .47-.86 , ON Semiconductor, MJE15035G DataSheet download, circuit diagram from SeekIC.com

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MJE15035G: Transistors Bipolar (BJT) 4A 350V 50W PNP

MJE15035G Data Sheet

US $ .47~.86 / Piece | Get Latest Price

Part Number:: MJE15035G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	350 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	4 A
DC Collector/Base Gain hfe Min :	100	Configuration :	Single Dual Collector
Maximum Operating Frequency :	30 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220AB
Packaging :	Tube

Description

DC Collector/Base Gain hfe Min : 100
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Configuration : Single Dual Collector
Maximum Operating Frequency : 30 MHz (Min)
Collector- Emitter Voltage VCEO Max : 350 V

Parameters:

Technical/Catalog Information	MJE15035G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	4A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE15035G MJE15035G MJE15035GOS ND MJE15035GOSND MJE15035GOS

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MJE15035G

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