MJE15035

DC Collector/Base Gain hfe Min : 100
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Configuration : Single Dual Collector
Maximum Operating Frequency : 30 MHz (Min)
Collector- Emitter Voltage VCEO Max : 350 V


Specifications

Rating	Symbol	MJE15034 MJE15035	Unit
Collector−Emitter Voltage	VCEO	350	Vdc
Collector−Base Voltage	VCB	350	Vdc
Emitter−Base Voltage	VEB	5.0	Vdc
Collector Current − Continuous − Peak	IC	4.0 8.0	Adc
Base Current	IB	1.0	Adc
Total Power Dissipation @ TC = 25°C Derate above 25°C	PD	50 0.40	Watts W/°C
Total Power Dissipation @ TA = 25°C Derate above 25°C	PD	2.0 0.016	Watts W/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +150	°C

Parameters:

Technical/Catalog Information	MJE15035
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	4A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJE15035 MJE15035 MJE15035OS ND MJE15035OSND MJE15035OS