MJE15032

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
DC Collector/Base Gain hfe Min : 70
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
Collector- Emitter Voltage VCEO Max : 250 V
Maximum Operating Frequency : 30 MHz (Min)


Specifications

Rating	Symbol	Value		Unit
CollectorEmitter Voltage	VCEO	250		Vdc
CollectorEmitter Voltage	VCB	250		Vdc
Emitter-Base Voltage	VEB	5.0		Vdc
Collector Current - Continuous - Peak	IC	8.0 16		Adc
Base Current	IB	2.0		Adc
Total Device Dissipation @ TC = 25°C Derated above 25°C	PD	50 0.40		Watts W/
Total Device Dissipation @ TA = 25°C Derated above 25°C	PD	2.0 0.016		Watts W/
Operating and Storage Temperature	Tj,Tstg	-65 to +150

Parameters:

Technical/Catalog Information	MJE15032
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	8A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJE15032 MJE15032 MJE15032OS ND MJE15032OSND MJE15032OS