MJE15030G

Transistors Bipolar (BJT) 8A 150V 50W NPN

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MJE15030G: Transistors Bipolar (BJT) 8A 150V 50W NPN

floor Price/Ceiling Price

US $ .42~.76 / Piece | Get Latest Price
Part Number:
MJE15030G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.76
  • $.61
  • $.54
  • $.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 150 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 30 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 30 MHz (Min)
Collector- Emitter Voltage VCEO Max : 150 V


Parameters:

Technical/Catalog InformationMJE15030G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)150V
Current - Collector (Ic) (Max)8A
Power - Max50W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJE15030G
MJE15030G
MJE15030GOS ND
MJE15030GOSND
MJE15030GOS



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