MJE15029

Transistors Bipolar (BJT) 8A 120V 50W PNP

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SeekIC No. : 00214305 Detail

MJE15029: Transistors Bipolar (BJT) 8A 120V 50W PNP

floor Price/Ceiling Price

Part Number:
MJE15029
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 120 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 40 Configuration : Single
Maximum Operating Frequency : 30 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 40
Collector- Emitter Voltage VCEO Max : 120 V
Maximum Operating Frequency : 30 MHz (Min)


Parameters:

Technical/Catalog InformationMJE15029
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)8A
Power - Max50W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJE15029
MJE15029
MJE15029OS ND
MJE15029OSND
MJE15029OS



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