Features: • High VCEV Capability (1800 Volts)• Low Saturation Voltage• 100 Performance Specified for:ReverseBiased SOA with Inductive LoadsSwitching Times with Inductive LoadsSaturation VoltagesLeakage CurrentsApplication• Fluorescent Lamp Ballasts• Inverters• S...
MJE1320: Features: • High VCEV Capability (1800 Volts)• Low Saturation Voltage• 100 Performance Specified for:ReverseBiased SOA with Inductive LoadsSwitching Times with Inductive LoadsSatur...
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• High VCEV Capability (1800 Volts)
• Low Saturation Voltage
• 100 Performance Specified for:
ReverseBiased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
Rating |
Symbol |
Value |
Unit | |
CollectorEmitter Voltage |
VCEO(sus) |
900 |
Vdc | |
CollectorEmitter Voltage |
VCEV |
1800 |
Vdc | |
Emitter-Base Voltage |
VEB |
9 |
Vdc | |
Collector Current - Continuous - Peak (1) |
IC ICM |
2 5 |
Adc | |
Base Current - Continuous - Peak (1) |
IB IBM |
1.5 2.5 |
Adc | |
Total Device Dissipation @ TC = 25°C TC = 100°C Derated above 25°C |
PD |
80 32 0.64 |
Watts W/ | |
Operating and Storage Temperature |
Tj,Tstg |
-65 to +150 |
This transistor MJE1320 is designed for highvoltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for lineoperated switchmode applications.