MJE13009G Selling Leads, Price trend , ON Semiconductor, MJE13009G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00209951 Detail

MJE13009G: Transistors Bipolar (BJT) 12A 400V 100W NPN

MJE13009G Data Sheet

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Part Number:: MJE13009G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	400 V
Emitter- Base Voltage VEBO :	9 V	Maximum DC Collector Current :	12 A
DC Collector/Base Gain hfe Min :	8	Configuration :	Single
Maximum Operating Frequency :	4 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220AB
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Maximum DC Collector Current : 12 A
DC Collector/Base Gain hfe Min : 8
Package / Case : TO-220AB
Packaging : Tube
Maximum Operating Frequency : 4 MHz (Min)
Emitter- Base Voltage VEBO : 9 V

Parameters:

Technical/Catalog Information	MJE13009G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	12A
Power - Max	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 1A, 5A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE13009G MJE13009G MJE13009GOS ND MJE13009GOSND MJE13009GOS

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MJE13009G

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