MJE13009

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Maximum DC Collector Current : 12 A
DC Collector/Base Gain hfe Min : 8
Package / Case : TO-220AB
Packaging : Tube
Emitter- Base Voltage VEBO : 9 V
Maximum Operating Frequency : 4 MHz


Features:

* VCEO 400 V and 300 V
* Reverse Bias SOA with Inductive Loads @ TC = 100
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100 tc @ 8 A, 100 is 120 ns (Typ).
* 700 V Blocking Capability
* SOA and Switching Applications Information.




Description

The MJE13009 is designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

Parameters:

Technical/Catalog Information	MJE13009
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	12A
Power - Max	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 1A, 5A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJE13009 MJE13009 MJE13009OS ND MJE13009OSND MJE13009OS