MJE13007G, US $ .32-.59 , ON Semiconductor, MJE13007G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00203870 Detail

MJE13007G: Transistors Bipolar (BJT) 8A 400V 80W NPN

MJE13007G Data Sheet

US $ .32~.59 / Piece | Get Latest Price

Part Number:: MJE13007G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	400 V
Emitter- Base Voltage VEBO :	9 V	Maximum DC Collector Current :	8 A
DC Collector/Base Gain hfe Min :	8	Configuration :	Single
Maximum Operating Frequency :	14 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220AB
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
DC Collector/Base Gain hfe Min : 8
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
Emitter- Base Voltage VEBO : 9 V
Maximum Operating Frequency : 14 MHz

Parameters:

Technical/Catalog Information	MJE13007G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	8A
Power - Max	80W
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 2A
Frequency - Transition	14MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE13007G MJE13007G MJE13007GOS ND MJE13007GOSND MJE13007GOS

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MJE13007G

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