MJE13007A

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
Emitter- Base Voltage VEBO : 9 V
Maximum Operating Frequency : 4 MHz
DC Collector/Base Gain hfe Min : 6


Features:

· SGS-THOMSON PREFERRED SALESTYPE
· NPN TRANSISTOR
· HIGH CURRENT CAPABILITY


Application

The MJE13007A is silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package.

They are inteded for use in motor control, switching regulators etc.


Specifications

SYMBOL	PARAMETER	Value	UNIT
VCBO	Collector-Emitter Voltage (IB = 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
VCEO	Collector-Emitter Voltage (VBE = -1.5V)	850	V
IC	Collector Current	8	A
ICM	Collector Peak Current	16	A
IB	Base Current	4	A
IBM	Base Peak Current	8	A
IE	Emitter Current	12	A
IEM	Emitter Peak Current	24	A
Ptot	Total Dissipation at Tc 25	80	W
TJ	Max. Operating Junction Temperature	150
Tamb	Storage Temperature	- 65 ~ 150

Description

The MJE13007A features are as follows:
· SWITCHING REGULATORS
· MOTOR CONTROL