MJE13003G

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Box
Maximum DC Collector Current : 1.5 A
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : TO-225
DC Collector/Base Gain hfe Min : 8 at 500 mA at 2 V


Parameters:

Technical/Catalog Information	MJE13003G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	1.5A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 500mA
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE13003G MJE13003G MJE13003GOS ND MJE13003GOSND MJE13003GOS