MJE13003

Transistors Bipolar (BJT) BIP NPN 2A 400V

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SeekIC No. : 00214278 Detail

MJE13003: Transistors Bipolar (BJT) BIP NPN 2A 400V

floor Price/Ceiling Price

Part Number:
MJE13003
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 8 at 500 mA at 2 V Configuration : Single
Maximum Operating Frequency : 3 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-225
Packaging : Box    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Box
Maximum DC Collector Current : 1.5 A
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : TO-225
DC Collector/Base Gain hfe Min : 8 at 500 mA at 2 V


Features:

• Reverse Biased SOA with Inductive Loads @ TC = 100• Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100 . . . tc @ 1 A, 100C is 290 ns (Typ).
• 700 V Blocking Capability
• SOA and Switching Applications Information.





Specifications

Rating
Symbol
MJE13002
MJE13003
Unit
CollectorEmitter Voltage
VCEO(SUS)
300
400
Vdc
CollectorBase Voltage
VCEV
600
700
Vdc
EmitterBase Voltage
VEBO
9
Vdc
Collector Current - Continuous
- Peak (1)
IC
ICM
1.5
3
Adc
Base Current - Continuous
- Peak (1)
IB
IBM
0.75
1.5
Adc
Emitter Current - Continuous
- Peak (1)
IE
IEM
2.25
4.5
Adc
Total Power Dissipation @ TA = 25
Derate Above 25
PD
1.4
11.2
Watts
mW/
Total Power Dissipation @ TC = 25
Derate Above 25
PD
40
320
Watts
W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +200





Parameters:

Technical/Catalog InformationMJE13003
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)1.5A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 500mA
Frequency - Transition10MHz
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJE13003
MJE13003
MJE13003OS ND
MJE13003OSND
MJE13003OS



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