MJD49T4

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-252
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 30
Collector- Emitter Voltage VCEO Max : 350 V
Maximum Operating Frequency : 10 MHz


Features:

·STMicroelectronics PREFERRED SALESTYPE
·HIGH VOLTAGE CAPABILITY
·SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
·ELECTRICALLY SIMILAR TO TIP49


Application

·SWITCH MODE POWER SUPPLIES
·AUDIO AMPLIFIERS
·GENERAL PURPOSE SWITCHING AND AMPLIFIER


Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage (IE = 0)	450	V
VCEO	Collector-Emitter Voltage (IB = 0)	350	V
VEBO	Emitter-Base Voltage (IC = 0)	5	V
IC	Collector Current	1	A
ICM	Collector Peak Current (tp < 5 ms)	2	A
IB	Base Current	0.6	A
IBM	Base Peak Current (tp < 5 ms)	1.2	A
Ptot	Total Dissipation at Tc = 25	15	W
Tstg	Storage Temperature	-65 to 150
TJ	Max. Operating Junction Temperature	150

Description

The MJD49T4 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor.