Transistors Bipolar (BJT) PNP Epitaxial Sil
MJD45H11TM: Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 80 V |
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 8 A |
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single |
Maximum Operating Frequency : | 40 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | TO-252 |
Packaging : | Reel |
Technical/Catalog Information | MJD45H11TM |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 8A |
Power - Max | 1.75W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 1V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
Frequency - Transition | 40MHz |
Current - Collector Cutoff (Max) | 10A |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Digi-Reel? |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJD45H11TM MJD45H11TM MJD45H11TMDKR ND MJD45H11TMDKRND MJD45H11TMDKR |