MJD45H11-1G

Transistors Bipolar (BJT) 8A 80V 20W PNP

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MJD45H11-1G: Transistors Bipolar (BJT) 8A 80V 20W PNP

floor Price/Ceiling Price

US $ .16~.23 / Piece | Get Latest Price
Part Number:
MJD45H11-1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~800
  • 800~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.23
  • $.18
  • $.17
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 60 at 2 A at 1 V Configuration : Single
Maximum Operating Frequency : 90 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : IPAK
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Package / Case : IPAK
Maximum DC Collector Current : 8 A
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 60 at 2 A at 1 V
Maximum Operating Frequency : 90 MHz


Parameters:

Technical/Catalog InformationMJD45H11-1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)8A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Frequency - Transition90MHz
Current - Collector Cutoff (Max)1A
Mounting TypeSurface Mount
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJD45H11 1G
MJD45H111G
MJD45H11 1GOS ND
MJD45H111GOSND
MJD45H11-1GOS



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