Transistors Bipolar (BJT) 8A 80V 20W PNP
MJD45H11-1G: Transistors Bipolar (BJT) 8A 80V 20W PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 80 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 8 A |
DC Collector/Base Gain hfe Min : | 60 at 2 A at 1 V | Configuration : | Single |
Maximum Operating Frequency : | 90 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | IPAK |
Packaging : | Tube |
Technical/Catalog Information | MJD45H11-1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 8A |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 1V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
Frequency - Transition | 90MHz |
Current - Collector Cutoff (Max) | 1A |
Mounting Type | Surface Mount |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJD45H11 1G MJD45H111G MJD45H11 1GOS ND MJD45H111GOSND MJD45H11-1GOS |