Transistors Bipolar (BJT) 6A 100V 20W PNP
MJD42C1G: Transistors Bipolar (BJT) 6A 100V 20W PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 100 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 6 A |
Configuration : | Single | Maximum Operating Frequency : | 3 MHz (Min) |
Maximum Operating Temperature : | + 150 C | Package / Case : | IPAK |
Packaging : | Tube |
Technical/Catalog Information | MJD42C1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Current - Collector (Ic) (Max) | 6A |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A, 4V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 600mA, 6A |
Frequency - Transition | 3MHz |
Current - Collector Cutoff (Max) | 50A |
Mounting Type | Through Hole |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJD42C1G MJD42C1G |