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MJD32C: Transistors Bipolar (BJT) 3A 100V 15W PNP

MJD32C Data Sheet

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Part Number:: MJD32C
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/26

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Transistors Bipolar (BJT) NPN Gen Pur Switch

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	100 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	3 A
DC Collector/Base Gain hfe Min :	25 at 1 A at 4 V	Configuration :	Single
Maximum Operating Frequency :	3 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	DPAK
Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Package / Case : DPAK
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Maximum Operating Frequency : 3 MHz (Min)
DC Collector/Base Gain hfe Min : 25 at 1 A at 4 V

Specifications

Part Number	MJD32C
Product Type	PNP
V_CEO (V)	-100
I_C (A)	-3
I_CM (A)	-5
P_D (W)	1.56
h_FE Min	10
h_FE Max	50
@ I_C (A)	-3
V_{CE (SAT)} Max (mV)	-1200
@ I_C (A)	-3
@ I_B (mA)	-375
f_T Min (MHz)	3
R_{CE (SAT)} (mΩ)	-

Parameters:

Technical/Catalog Information	MJD32C
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	3A
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	50A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD32C MJD32C

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MJD32C

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