Transistors Bipolar (BJT) NPN Epitaxial Sil
MJD31CTF: Transistors Bipolar (BJT) NPN Epitaxial Sil
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 100 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 3 A |
DC Collector/Base Gain hfe Min : | 10 | Configuration : | Single |
Maximum Operating Frequency : | 3 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | TO-252 |
Packaging : | Reel |
Technical/Catalog Information | MJD31CTF |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Current - Collector (Ic) (Max) | 3A |
Power - Max | 1.56W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
Frequency - Transition | 3MHz |
Current - Collector Cutoff (Max) | 20A |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Digi-Reel? |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJD31CTF MJD31CTF MJD31CTFDKR ND MJD31CTFDKRND MJD31CTFDKR |