MJD31C

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 20
Package / Case : TO-252


Features:

·Lead Formed for Surface Mount Applications in Plastic Sleeves
·Pb-Free Packages are Available




Specifications

SYMBOL	PARAMETER	RATING	UNIT
VCBO	Collector to base voltage MJD31,MJD32 MJD31C,MJD32C	40 100	V
VCE	Collector to emitter voltage MJD31,MJD32 MJD31C,MJD32C	40 100	V
VEB	Emitter to base voltage	5	V
IC	Collector current	3	A
ICP	Collector current (pulse)	5	A
IB	base current	1	A
PD	Total Device Dissipation FR-5 Board @TA = 25 Derate above 25	15 0.12	W W/
PD	Total Device Dissipation Alumina Substrate @TA = 25 Derate above 25	1.56 0.012	W W/
Tstg	Storage temperature	-65 to +150
Tj	Junction temperature	150
RèJC	Thermal Resistance, Junction-to-Case	8.3	W/
RèJA	Thermal Resistance, Junction-to-Ambient	80	W/
TL	Lead Temperature for Soldering Purposes	260

Part Number	MJD31C
Product Type	NPN
VCEO (V)	100
IC (A)	3
ICM (A)	5
PD (W)	1.56
hFE Min	10
hFE Max	50
@ IC (A)	3
VCE (SAT) Max (mV)	1200
@ IC (A)	3
@ IB (mA)	375
fT Min (MHz)	3
RCE (SAT) (m)	-

Parameters:

Technical/Catalog Information	MJD31C
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	3A
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	50A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD31C MJD31C