Transistors Bipolar (BJT) 10A 60V 20W NPN
MJD3055T4G: Transistors Bipolar (BJT) 10A 60V 20W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 10 A |
DC Collector/Base Gain hfe Min : | 20 at 4 A at 4 V | Configuration : | Single |
Maximum Operating Frequency : | 2 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | DPAK |
Packaging : | Reel |
Technical/Catalog Information | MJD3055T4G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
Vce Saturation (Max) @ Ib, Ic | 1.1V @ 400mA, 4A |
Frequency - Transition | 2MHz |
Current - Collector Cutoff (Max) | 50A |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Digi-Reel? |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJD3055T4G MJD3055T4G MJD3055T4GOSDKR ND MJD3055T4GOSDKRND MJD3055T4GOSDKR |