MJD3055T4G, US $ .25-.44 , ON Semiconductor, MJD3055T4G DataSheet download, circuit diagram from SeekIC.com

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MJD3055T4G: Transistors Bipolar (BJT) 10A 60V 20W NPN

MJD3055T4G Data Sheet

US $ .25~.44 / Piece | Get Latest Price

Part Number:: MJD3055T4G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/22

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MJD3055 evaluate
Transistors Bipolar (BJT) 10A 60V 20W NPN
MJD3055G evaluate
US $.25 - .44 / Piece

Transistors Bipolar (BJT) 10A 60V 20W NPN
MJD3055T4 evaluate
US $.25 - .34 / Piece

Transistors Bipolar (BJT) NPN Gen Pur Switch

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	10 A
DC Collector/Base Gain hfe Min :	20 at 4 A at 4 V	Configuration :	Single
Maximum Operating Frequency :	2 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	DPAK
Packaging :	Reel

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 2 MHz (Min)
Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 20 at 4 A at 4 V

Parameters:

Technical/Catalog Information	MJD3055T4G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	10A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 400mA, 4A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	50A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD3055T4G MJD3055T4G MJD3055T4GOSDKR ND MJD3055T4GOSDKRND MJD3055T4GOSDKR

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