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MJD253-1G

Transistors Bipolar (BJT) 4A 100V 12.5W PNP

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SeekIC No. : 00205798 Detail

MJD253-1G: Transistors Bipolar (BJT) 4A 100V 12.5W PNP

MJD253-1G Data Sheet

floor Price/Ceiling Price

US $ .23~.46 / Piece | Get Latest Price
Part Number:
MJD253-1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.46
  • $.39
  • $.28
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 40 at 200 mA at 1 V Configuration : Single
Maximum Operating Frequency : 40 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : IPAK
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 100 V
Maximum DC Collector Current : 4 A
Packaging : Tube
Package / Case : IPAK
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 40 at 200 mA at 1 V
Maximum Operating Frequency : 40 MHz (Min)


Parameters:

Technical/Catalog InformationMJD253-1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)4A
Power - Max12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
Frequency - Transition40MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJD253 1G
MJD2531G



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