MJD122G, US $ .18-.34 , ON Semiconductor, MJD122G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00216752 Detail

MJD122G: Transistors Darlington 8A 100V Bipolar Power NPN

MJD122G Data Sheet

US $ .18~.34 / Piece | Get Latest Price

Part Number:: MJD122G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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25~100
100~500

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$.18

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Upload time: 2024/9/26

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What is this?

MJD112 evaluate
Transistors Darlington 2A 100V Bipolar
MJD112/L evaluate
Features: ·High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A.·Low Collector-Emitter Saturation...
MJD112-001 evaluate
Transistors Darlington 2A 100V Bipolar

Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	NPN
Collector- Emitter Voltage VCEO Max :	100 V	Emitter- Base Voltage VEBO :	5 V
Collector- Base Voltage VCBO :	100 V	Maximum DC Collector Current :	8 A
Maximum Collector Cut-off Current :	10 uA	Power Dissipation :	20 W
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Tube

Description

Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 10 uA
Power Dissipation : 20 W
Package / Case : DPAK

Parameters:

Technical/Catalog Information	MJD122G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	8A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	2V @ 16mA, 4A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	10A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD122G MJD122G MJD122GOS ND MJD122GOSND MJD122GOS

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MJD122G

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