Transistors Bipolar (BJT) 8A 80V 50W NPN
MJB44H11T4G: Transistors Bipolar (BJT) 8A 80V 50W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 80 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 10 A |
DC Collector/Base Gain hfe Min : | 60 | Configuration : | Single |
Maximum Operating Frequency : | 50 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | D2PAK |
Packaging : | Reel |
Technical/Catalog Information | MJB44H11T4G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 50W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 1V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
Frequency - Transition | 50MHz |
Current - Collector Cutoff (Max) | 10A |
Mounting Type | Surface Mount |
Package / Case | D²Pak, SMD-220, TO-263 (3 leads + tab) |
Packaging | Cut Tape (CT) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJB44H11T4G MJB44H11T4G MJB44H11T4GOSCT ND MJB44H11T4GOSCTND MJB44H11T4GOSCT |