MJ2501

Maximum Collector Cut-off Current :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 10 A
Package / Case : TO-3
Power Dissipation : 150 W


Specifications

Symbol	Parameter		Value	Unit
		PNP	MJ2501
		NPN	MJ3001
VCBO	Collector-base Voltage (IE = 0)		80	V
VCEO	Collector-emitter Voltage (IB = 0)		80	V
VEBO	Emitter-base Voltage (IC = 0)		5	V
IC	Collector Current		10	A
IB	Base Current		0.2	A
Ptot	Total Dissipation at Tc £ 25 oC		150	W
Tstg	Storage Temperature		-65 to 200
Tj	Max. Operating Junction Temperature		200

Description

The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.

The complementary NPN type is the MJ3001.

Parameters:

Technical/Catalog Information	MJ2501
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	10A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 3V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJ2501 MJ2501 497 2392 ND 4972392ND 497-2392