MJ16110 Selling Leads, Price trend, MJ16110 DataSheet download, circuit diagram from SeekIC.com

Features: • Excellent Dynamic Saturation Characteristics• Rugged RBSOA Capability• CollectorEmitter Sustaining Voltage - VCEO(sus) - 400 V• CollectorEmitter Breakdown - V(BR)CES - 650 V• StateofArt Bipolar Power Transistor Design• Fast Inductive Switching: tfi =...

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SeekIC No. : 004421492 Detail

MJ16110: Features: • Excellent Dynamic Saturation Characteristics• Rugged RBSOA Capability• CollectorEmitter Sustaining Voltage - VCEO(sus) - 400 V• CollectorEmitter Breakdown - V(BR)...

MJ16110 Data Sheet

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Part Number:: MJ16110
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/14

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Description

Features:

• Excellent Dynamic Saturation Characteristics
• Rugged RBSOA Capability
• CollectorEmitter Sustaining Voltage - VCEO(sus) - 400 V
• CollectorEmitter Breakdown - V(BR)CES - 650 V
• StateofArt Bipolar Power Transistor Design
• Fast Inductive Switching: tfi = 25 ns (Typ) @ 100C tc = 50 ns (Typ) @ 100C tsv = 1 ms (Typ) @ 100C
• Ultrafast FBSOA Specified
• 100C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages

Specifications

Rating	Symbol	MJ16018	MJW16018	Unit
CollectorEmitter Sustaining Voltage	V_CEO(SUS)	400		Vdc
CollectorEmitter Breakdown Voltage	V_CBs	650		Vdc
EmitterBase Voltage	V_EBO	6		Vdc
Collector Current - Continuous - Pulsed (1)	I_C I_CM	15 20		Adc
Base Current - Continuous - Pulsed (1)	I_B I_BM	10 15		Adc
Total Power Dissipation @ T_C = 25 @ T_C = 100 Derate above TC = 25	P_D	175 100 1	135 54 10.9	Watts W/
Operating and Storage Junction Temperature Range	T_J, T_stg	65 to +200	55 to +200

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MJ16110

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