Transistors Bipolar (BJT) 60A 80V 300W NPN
MJ14002G: Transistors Bipolar (BJT) 60A 80V 300W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 80 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 60 A | ||
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single | ||
Maximum Operating Temperature : | + 200 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-204 | Packaging : | Tray |
Technical/Catalog Information | MJ14002G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 60A |
Power - Max | 300W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 50A, 3V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 2.5A, 25A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 1mA |
Mounting Type | Chassis Mount |
Package / Case | TO-204, TO-3 |
Packaging | Tray |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJ14002G MJ14002G MJ14002GOS ND MJ14002GOSND MJ14002GOS |