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MJ14001G

Transistors Bipolar (BJT) 60A 60V 300W PNP

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SeekIC No. : 00210777 Detail

MJ14001G: Transistors Bipolar (BJT) 60A 60V 300W PNP

MJ14001G Data Sheet

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Part Number:
MJ14001G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 60 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Temperature : + 200 C Mounting Style : Through Hole
Package / Case : TO-204 Packaging : Tray    

Description

Maximum Operating Frequency :
Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
DC Collector/Base Gain hfe Min : 30
Maximum DC Collector Current : 60 A


Parameters:

Technical/Catalog InformationMJ14001G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)60A
Power - Max300W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 50A, 3V
Vce Saturation (Max) @ Ib, Ic1V @ 2.5A, 25A
Frequency - Transition-
Current - Collector Cutoff (Max)1mA
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJ14001G
MJ14001G



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