Transistors Darlington 50A 120V Bipolar Power NPN
MJ11032G: Transistors Darlington 50A 120V Bipolar Power NPN
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Configuration : | Single | Transistor Polarity : | NPN |
Collector- Emitter Voltage VCEO Max : | 120 V | Emitter- Base Voltage VEBO : | 5 V |
Collector- Base Voltage VCBO : | 120 V | Maximum DC Collector Current : | 50 A |
Power Dissipation : | 0.3 W | Maximum Operating Temperature : | + 200 C |
Mounting Style : | Through Hole | Package / Case : | TO-204 |
Packaging : | Tray |
Technical/Catalog Information | MJ11032G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Current - Collector (Ic) (Max) | 50A |
Power - Max | 300W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 25A, 5V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 250mA, 25A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 2mA |
Mounting Type | Chassis Mount |
Package / Case | TO-204, TO-3 |
Packaging | Tray |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJ11032G MJ11032G MJ11032GOS ND MJ11032GOSND MJ11032GOS |