Application• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc• Curves to 100 A (Pulsed)• Diode Protection to Rated IC• Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor• Junction Temperature to +200CSpecifications ...
MJ11031: Application• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc• Curves to 100 A (Pulsed)• Diode Protection to Rated IC• Monolithic Construct...
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Rating |
Symbol |
MJ11028 MJ11029 |
MJ11030 MJ11031 |
MJ11032 MJ11033 |
Unit |
CollectorEmitter Voltage |
VCEO |
60 |
90 |
120 |
Vdc |
Collector Base Voltage |
VCB |
60 |
90 |
120 |
Vdc |
EmitterBase Voltage |
VEB |
5 |
Vdc | ||
Collector Current - Continuous Peak |
IC ICM |
50 100 |
Adc | ||
Base Current - Continuous |
IB |
2 |
Adc | ||
Total Power Dissipation @ TC = 25 Derate above 25C @ TC = 100 |
PD |
300 1.71 |
Watts W/ | ||
Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +200 |