Series: -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: -
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Manufacturer: ON Semiconductor
Voltage - Collector Emitter Breakdown (Max): 90V
Current - Collector Cutoff (Max): 2mA
Supplier Device Package: TO-3
Packaging: Tray
Current - Collector (Ic) (Max): 50A
Package / Case: TO-204AE
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Power - Max: 300W
Application• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
• Junction Temperature to +200CSpecifications
|
Rating |
Symbol |
MJ11028
MJ11029
|
MJ11030
MJ11031
|
MJ11032
MJ11033 |
Unit |
| CollectorEmitter Voltage |
VCEO |
60 |
90 |
120 |
Vdc |
| Collector Base Voltage |
VCB |
60 |
90 |
120 |
Vdc |
| EmitterBase Voltage |
VEB |
5 |
Vdc |
Collector Current - Continuous
Peak |
IC
ICM |
50
100 |
Adc |
| Base Current - Continuous |
IB |
2 |
Adc |
Total Power Dissipation @ TC = 25
Derate above 25C @ TC = 100 |
PD |
300
1.71 |
Watts
W/ |
Operating and Storage Junction
Temperature Range |
TJ, Tstg |
65 to +200 |
|
Parameters: | Technical/Catalog Information | MJ11030 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 90V |
| Current - Collector (Ic) (Max) | 50A |
| Power - Max | 300W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 25A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 250mA, 25A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 2mA |
| Mounting Type | Chassis Mount |
| Package / Case | TO-204, TO-3 |
| Packaging | Tray |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJ11030
MJ11030
|
MJ11030 Data Sheet
