MJ11029

Transistors Darlington 50A 60V Bipolar

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SeekIC No. : 00217906 Detail

MJ11029: Transistors Darlington 50A 60V Bipolar

floor Price/Ceiling Price

Part Number:
MJ11029
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 60 V Maximum DC Collector Current : 50 A
Power Dissipation : 0.3 W Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-204
Packaging : Tray    

Description

Maximum Collector Cut-off Current :
Transistor Polarity : PNP
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 50 A
Power Dissipation : 0.3 W
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V


Application

• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
• Junction Temperature to +200C





Specifications

Rating
Symbol
MJ11028
MJ11029
MJ11030
MJ11031
MJ11032
MJ11033
Unit
CollectorEmitter Voltage
VCEO
60
90
120
Vdc
Collector Base Voltage
VCB
60
90
120
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current - Continuous
Peak
IC
ICM
50
100
Adc
Base Current - Continuous
IB
2
Adc
Total Power Dissipation @ TC = 25
Derate above 25C @ TC = 100
PD
300
1.71
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200





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