MJ11016

Maximum Collector Cut-off Current :
Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 120 V
Collector- Base Voltage VCBO : 120 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Maximum DC Collector Current : 30 A
Power Dissipation : 200 W


Application

• High DC Current Gain - hFE = 1000 (Min) @ IC 20 Adc
• Monolithic Construction with Builtin Base Emitter Shunt Resistor
• Junction Temperature to +200




Specifications

Rating	Symbol	MJ11012	MJ11013 MJ11014	MJ11015 MJ11016	Unit
CollectorEmitter Voltage	VCEO	60	90	120	Vdc
Collector Base Voltage	VCBO	60	90	120	Vdc
EmitterBase Voltage	VEBO	5			Vdc
Collector Current	IC	30			Adc
Base Current	IB	1			Adc
Total Device Dissipation @TC = 25 Derate above 25 @ TC = 100	PD	200 1.15			Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +200

Parameters:

Technical/Catalog Information	MJ11016
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	120V
Current - Collector (Ic) (Max)	30A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 20A, 5V
Vce Saturation (Max) @ Ib, Ic	3V @ 200mA, 20A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ11016 MJ11016 MJ11016OS ND MJ11016OSND MJ11016OS