MJ11015

Transistors Darlington 30A 120V Bipolar

product image

MJ11015 Picture
SeekIC No. : 00217998 Detail

MJ11015: Transistors Darlington 30A 120V Bipolar

floor Price/Ceiling Price

Part Number:
MJ11015
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 120 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 120 V Maximum DC Collector Current : 30 A
Power Dissipation : 200 W Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-204
Packaging : Tray    

Description

Maximum Collector Cut-off Current :
Transistor Polarity : PNP
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 120 V
Collector- Base Voltage VCBO : 120 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Maximum DC Collector Current : 30 A
Power Dissipation : 200 W


Application

• High DC Current Gain - hFE = 1000 (Min) @ IC 20 Adc
• Monolithic Construction with Builtin Base Emitter Shunt Resistor
• Junction Temperature to +200





Specifications

Rating
Symbol
MJ11012
MJ11013
MJ11014
MJ11015
MJ11016
Unit
CollectorEmitter Voltage
VCEO
60
90
120
Vdc
Collector Base Voltage
VCBO
60
90
120
Vdc
EmitterBase Voltage
VEBO
5
Vdc
Collector Current
IC
30
Adc
Base Current
IB
1
Adc
Total Device Dissipation @TC = 25
Derate above 25 @ TC = 100
PD

200
1.15

Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +200





Parameters:

Technical/Catalog InformationMJ11015
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP - Darlington
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)30A
Power - Max200W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 20A, 5V
Vce Saturation (Max) @ Ib, Ic3V @ 200mA, 20A
Frequency - Transition4MHz
Current - Collector Cutoff (Max)1mA
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJ11015
MJ11015
MJ11015OS ND
MJ11015OSND
MJ11015OS



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Semiconductor Modules
Potentiometers, Variable Resistors
Discrete Semiconductor Products
LED Products
Static Control, ESD, Clean Room Products
Cable Assemblies
View more