MJ11014

Application• High DC Current Gain - hFE = 1000 (Min) @ IC 20 Adc• Monolithic Construction with Builtin Base Emitter Shunt Resistor• Junction Temperature to +200Specifications Rating Symbol MJ11012 MJ11013MJ11014 MJ11015MJ11016 Unit CollectorEmitter Volta...

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SeekIC No. : 004421446 Detail

MJ11014: Application• High DC Current Gain - hFE = 1000 (Min) @ IC 20 Adc• Monolithic Construction with Builtin Base Emitter Shunt Resistor• Junction Temperature to +200Specifications ...

floor Price/Ceiling Price

Part Number:
MJ11014
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Application

• High DC Current Gain - hFE = 1000 (Min) @ IC 20 Adc
• Monolithic Construction with Builtin Base Emitter Shunt Resistor
• Junction Temperature to +200





Specifications

Rating
Symbol
MJ11012
MJ11013
MJ11014
MJ11015
MJ11016
Unit
CollectorEmitter Voltage
VCEO
60
90
120
Vdc
Collector Base Voltage
VCBO
60
90
120
Vdc
EmitterBase Voltage
VEBO
5
Vdc
Collector Current
IC
30
Adc
Base Current
IB
1
Adc
Total Device Dissipation @TC = 25
Derate above 25 @ TC = 100
PD

200
1.15

Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +200





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