Application• High DC Current Gain - hFE = 1000 (Min) @ IC 20 Adc• Monolithic Construction with Builtin Base Emitter Shunt Resistor• Junction Temperature to +200Specifications Rating Symbol MJ11012 MJ11013MJ11014 MJ11015MJ11016 Unit CollectorEmitter Volta...
MJ11014: Application• High DC Current Gain - hFE = 1000 (Min) @ IC 20 Adc• Monolithic Construction with Builtin Base Emitter Shunt Resistor• Junction Temperature to +200Specifications ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Rating |
Symbol |
MJ11012 |
MJ11013 MJ11014 |
MJ11015 MJ11016 |
Unit |
CollectorEmitter Voltage |
VCEO |
60 |
90 |
120 |
Vdc |
Collector Base Voltage |
VCBO |
60 |
90 |
120 |
Vdc |
EmitterBase Voltage |
VEBO |
5 |
Vdc | ||
Collector Current |
IC |
30 |
Adc | ||
Base Current |
IB |
1 |
Adc | ||
Total Device Dissipation @TC = 25 Derate above 25 @ TC = 100 |
PD |
200 |
Watts W/ | ||
Operating and Storage Junction Temperature Range |
TJ, Tstg |
55 to +200 |