MIT-5A11J Selling Leads, Price trend, MIT-5A11J DataSheet download, circuit diagram from SeekIC.com

Features: ·Non -contact switching·For- direct pc board or·Dual - in - line socket mounting·Fast switching speed·Choice of mounting configurationSpecifications Parameter Symbol Minimum Rating Unit INPUT Continuous Forward Current LF 50 mA Reverse Voltage VR 5 ...

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SeekIC No. : 004421417 Detail

MIT-5A11J: Features: ·Non -contact switching·For- direct pc board or·Dual - in - line socket mounting·Fast switching speed·Choice of mounting configurationSpecifications Parameter Symbol Minimum R...

MIT-5A11J Data Sheet

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Part Number:: MIT-5A11J
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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268 Transactions

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Upload time: 2024/11/22

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Recent History
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US $.45 - .45 / Piece

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MIT-4A11A evaluate
Features: ·Ultra-compact·PWB mounting type package·High sensing accuracy ( Slit width: 0.3mm )·Gap...
MIT-4A11B evaluate
Features: ·Ultra-compact·PWB mounting type package·High sensing accuracy ( Slit width: 0.3mm )·Gap...

Product Details

Description

Features:

·Non -contact switching
·For- direct pc board or
·Dual - in - line socket mounting
·Fast switching speed
·Choice of mounting configuration

Specifications

Parameter		Symbol	Minimum Rating	Unit
INPUT	Continuous Forward Current	L_F	50	mA
	Reverse Voltage	V_R	5	V
	Power Dissipation	P_ad	75	mW
OUTPUT	Collector-emitter breakdown voltage	V_(BR)CEO	30	V
	Emitter-Collector breakdown voltage	V_(BR)ECO	5	V
	Collector power dissipation	P_C	75	mW
Total power dissipation		P_TOT	100	mW
Operating Temperature Range		T_opr	-25oC to + 85oC
Storage Temperature Range		T_STG	-40oC to + 100oC
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260oC

Description

The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.

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MIT-5A11J

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