Features: ·Ultra-compact·PWB mounting type package·High sensing accuracy ( Slit width: 0.3mm )·Gap between light emitter and detector: 1.2mmApplication·Cameras·Floppy disk drives·PrinterSpecifications Parameter Symbol Maximum Rating Unit NPUT Continuous Forward Current LF ...
MIT-4A11B: Features: ·Ultra-compact·PWB mounting type package·High sensing accuracy ( Slit width: 0.3mm )·Gap between light emitter and detector: 1.2mmApplication·Cameras·Floppy disk drives·PrinterSpecificatio...
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Parameter |
Symbol |
Maximum Rating |
Unit | |
NPUT |
Continuous Forward Current |
LF |
50 |
mA |
Reverse Voltage |
VR |
5 |
V | |
Power Dissipation |
Pad |
75 |
mW | |
OUTPUT |
Collector-emitter breakdown voltage |
V(BR)CEO |
30 |
V |
Emitter-Collector breakdown voltage |
V(BR)ECO |
5 |
V | |
Collector power dissipation |
PC |
75 |
mW | |
Total power dissipation |
PTOT |
mW | ||
Operating Temperature Range |
Topr |
|||
Storage Temperature Range |
TSTG |
|||
Soldering temperature |
TSOl |
The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.