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MIR-3301

Features: ·Compact and thin·MIR-3301 : Compact DIP, long lead type·Optimum detecting diatance : 0.8 - 1.0 mm·Wavelength : 940nm·Visible light cut-off typeSpecifications Parameter Symbol Minimum Rating Maximum Rating Unit INPUT Continuous Forward Current LF 50 mA...

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SeekIC No. : 004421405 Detail

MIR-3301: Features: ·Compact and thin·MIR-3301 : Compact DIP, long lead type·Optimum detecting diatance : 0.8 - 1.0 mm·Wavelength : 940nm·Visible light cut-off typeSpecifications Parameter Symbol ...

MIR-3301 Data Sheet

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Part Number:
MIR-3301
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

·Compact and thin
·MIR-3301 : Compact DIP, long lead type
·Optimum detecting diatance : 0.8 - 1.0 mm
·Wavelength : 940nm
·Visible light cut-off type




Specifications

Parameter
Symbol
Minimum Rating
Maximum Rating
Unit
INPUT Continuous Forward Current
LF
50
mA
Reverse Voltage
VR
5
V
Power Dissipation
Pad
75
mW
OUTPUT Collector-emitter breakdown voltage
V(BR)CEO
30
V
Emitter-Collector breakdown voltage
V(BR)ECO
5
V
Collector power dissipation
PC
75
mW
Total power dissipation
PTOT
100
mW
Operating Temperature Range
Topr
-25oC to + 85oC
Storage Temperature Range
TSTG
-40oC to + 100oC
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260oC



Description

The MIR-3301 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter.




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