DescriptionThe MIG30J806H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.MIG30J806H has four features. (1)Integrates inverter, converter power circuits and thermistor in one package. (2)Output (inverter stag...
MIG30J806H: DescriptionThe MIG30J806H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.MIG30J806H has four features. (1)I...
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Application`Integrates inverter power circuits & control circuits (IGBT drive units, protectio...
Features: ·Integrates inverter power circuits & control circuits (IGBT drive units, protection...
The MIG30J806H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.
MIG30J806H has four features. (1)Integrates inverter, converter power circuits and thermistor in one package. (2)Output (inverter stage) which means 30A/ 600V IGBT. (3)Input (converter stage) which means 30A/ 800V silicon rectifier. (4)The electrodes are isolated from case. Those are all the main features.
Some absolute maximum ratings of MIG30J806H have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its gate to emitter voltage would be +/-20V. (3)Its collector current would be 35A for DC and 70A for 1ms. (4)Its forward current would be 30A for DC and would be 60A for 1ms. (5)Its collector power dissipation would be 125W. (6)Its repetitive peak reverse voltage which would be 800V. (7)Its average output recitified current would be 30A. (8)Its peak one cycle surge forward current (50Hz, non-repetitive) which would be 400A. (9)Its storage temperature range would be from -40°C to 125°C. (10)Its isolation voltage would be 2500V. (11)Its screw torque would be 6Nm. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of MIG30J806H are concluded as follow. (1)Its gate leakage current would be max +/-500nA. (2)Its collector cutoff current would be max 1.0mA. (3)Its gate to emitter cutoff voltage would be min 5.0V and max 8.0V. (4)Its collector to emitter saturation voltage would be typ 2.1V and max 2.7V. (5)Its switching time would be typ 0.1us and max 0.2us for rise time and it would be typ 0.25us and max 0.50us for turn-on time and it would be typ 0.15us and max 0.30us for fall time and it would be typ 0.50us and max 0.8us for turn-off time. (6)Its forward voltage would be typ 2.0V and max 2.8V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!