MIG30J106L

The MIG30J106L is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.

MIG30J106L has four features. (1)Three phase IGBT inverter output. (2)Gate drive circuit. (3)Protection logic over current, over temperature and under voltage. (4)The electrodes are isolated from case. Those are all the main features.

Some absolute maximum ratings of MIG30J106L have been concluded into several points as follow. (1)Its inverter part supply voltage would be 450V. (2)Its collector emitter voltage would be 600V. (3)Its collector current DC would be 30A. (4)Its collector current peak would be 60A. (5)Its collector power dissipation would be 50W. (6)Its control part supply voltage would be 20V. (7)Its input current would be 30mA. (8)Its fault output voltage would be 20V. (9)Its fault output current would be 10mA. (10)Its storage temperature range would be from -40°C to +125°C. (11)Its operating temperature range would be from -20°C to 90°C. (12)Its isolation voltage would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of MIG30J106L about inverter part are concluded as follow. (1)Its supply voltage would be typ 300V. (2)Its collector to emitter saturation voltage would be typ 1.8V and max 2.3V. (3)Its forward voltage would be typ 2.2V and max 2.9V. (4)Its switching time would be typ 1.3us and max 2.5us for ton and would be typ 0.1us and max 0.2us for trr and would be typ 0.8us and max 1.6us for tc(on) and it would be typ 1.3us and max 2.8us for toff and would be typ 0.7us and max 1.0us for tc(off). (5)Its collector cutoff current would be max 1.0mA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!