MIG15J503H

Features:

·  The 4th generation trench gate thin wafer NPT IGBT is adopted.
·  FRD is built in.
·  The level shift circuit by high-voltage IC is built in.
·  The simplification of a high side driver power supply is possible by the bootstrap system.
·  Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protectionfunction are built in.
·  Short Circuit Protection and Over Temperature Protection state are outputted.
·  The lower arm emitter terminal has been independent by each phase for the purpose of the current detection atthe time of vector control.
·  Low thermal resistance by adoption of original high thermal conduction resin.


Pinout




Specifications

Item		Symbol	Rating	Unit
Power Supply Voltage		VBB	450	V
		VBB(surge)	500	V
		VCC	20	V
		VBS	20	V
Collector-Emitter Voltage		VCES	600	V
Each Collector Current (DC)		IC	±15	A
Each Collector Current (PEAK)		ICP	±30	A
Input Voltage		VIN	5.5	V
Fault Output Supply Voltage		VFO	20	V
Fault Output Current		IFO	15	mA
PGND-SGND Voltage Difference		VPGND-SGND	±5	V
Output Voltage Rate of Change		Dv/dt	20	kV/s
Collector Power Dissipation (Per 1 IGBT Chip)		PC	43	W
Collector Power Dissipation (Per 1 FRD Chip)		PC	25	W
Operating Temperature		TOPE	20~100	°C
Junction Temperature	(NOTE 1)	Tj	150	°C
Storage Temperature		Tstg	40~125	°C
Isolation Voltage(60Hz sinusoidal ,AC)		VISO	2500 (1min)	Vrms

Description

MIG15J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC MIG15J503H by the original high-voltage SOI(silicon-on-insulator)process drives these directly in response to a PWM signal.Moreover, since high-voltage level-shifter is built in high-voltage IC MIG15J503H, while being able to perform a direct drive without theinterface with which the upper arm IGBT is insulated, the drive power supply of an upper arm can be driven with a bootstrap system, and the simplification of a system is possible. Furthermore, each lower arm emitter terminal has been
independent so that detection of MIG15J503H  can perform current detection at the time of vector control by current detection resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and Over Temperature Protection. Original high thermal conduction resin of MIG15J503H is adopted as a package, and low heat resistance is realized.