MIG10Q806H

DescriptionThe MIG10Q806H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.MIG10Q806H has four features. (1)Integrates inverter, converter power circuits and thermistor in one package. (2)Output (inverter stag...

product image

MIG10Q806H Picture
SeekIC No. : 004421253 Detail

MIG10Q806H: DescriptionThe MIG10Q806H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.MIG10Q806H has four features. (1)I...

floor Price/Ceiling Price

Part Number:
MIG10Q806H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/14

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Description

The MIG10Q806H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.

MIG10Q806H has four features. (1)Integrates inverter, converter power circuits and thermistor in one package. (2)Output (inverter stage) which means 10A/ 1200V IGBT. (3)Input (converter stage) which means 15A/ 1600V silicon rectifier. (4)The electrodes are isolated from case. Those are all the main features.

Some absolute maximum ratings of MIG10Q806H have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its gate to emitter voltage would be +/-20V. (3)Its collector current would be 15A for DC and 30A for 1ms. (4)Its forward current would be 10A for DC and would be 20A for 1ms. (5)Its collector power dissipation would be 82W. (6)Its repetitive peak reverse voltage which would be 1600V. (7)Its average output recitified current would be 15A. (8)Its peak one cycle surge forward current (50Hz, non-repetitive) which would be 250A. (9)Its storage temperature range would be from -40°C to 125°C. (10)Its isolation voltage would be 2500V. (11)Its screw torque would be 6Nm. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of MIG10Q806H are concluded as follow. (1)Its gate leakage current would be max +/-500nA. (2)Its collector cutoff current would be max 0.5mA. (3)Its gate to emitter cutoff voltage would be typ 6.0V. (4)Its collector to emitter saturation voltage would be typ 2.8V and max 3.2V. (5)Its input capacitance would be typ 1200pF. (6)Its switching time would be typ 0.07us and max 0.15us for rise time and it would be typ 0.15us and max 0.30us for turn-on time and it would be typ 0.07us and max 0.10us for fall time and it would be typ 0.60us and max 0.9us for turn-off time. (7)Its forward voltage would be typ 2.0V and max 2.8V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Fans, Thermal Management
Undefined Category
Isolators
Hardware, Fasteners, Accessories
Motors, Solenoids, Driver Boards/Modules
View more